China Develops Flash Memory 10,000x Faster With 400-Picosecond Speed
A research team at Fudan University has unveiled a groundbreaking semiconductor storage device, known as “PoX,” which operates at an astonishing speed of 400 picoseconds per bit. This innovation could dramatically change the landscape of flash memory technology.
Key Points
- The new flash memory device performs at a staggering 10,000 times faster than traditional flash storage methods.
- It can program a single bit in just 400 picoseconds, equating to around 25 billion operations every second.
- Conventional memory types like SRAM and DRAM are significantly slower, operating in the nanosecond range and losing data when powered off.
- The development replaces silicon channels with two-dimensional Dirac graphene, maximising efficiency and speed.
- This advancement aims to alleviate memory bottlenecks in AI applications, which currently face limitations with traditional memory solutions.
Why should I read this?
If you’re into tech, especially AI and memory storage, this article is a must-read! It highlights a remarkable breakthrough that could reshape how data is processed at lightning speed. With these new capabilities, industries could see foundational changes, making it worth your while to dive into the details!