Did Peking U. Just Make the World’s Fastest Transistor – Without Using Silicon?
Peking University recently announced a groundbreaking new transistor that is reportedly the fastest and most efficient ever made, and guess what? It’s entirely silicon-free! The research team, led by Professor Peng Hailin, claims their self-engineered 2D transistor outperforms current silicon-based technologies, operating 40% faster and using 10% less energy.
Key Points
- The new transistor uses bismuth oxyselenide (BiâOâSe) instead of silicon, enabling it to operate at higher speeds.
- It can perform 40% faster than leading 3-nanometre silicon chips from Intel and TSMC while consuming less power.
- This development highlights a shift in the semiconductor industry, particularly for China’s push to innovate beyond silicon technologies.
- Two-dimensional semiconductors like BiâOâSe offer flexibility and robustness, making them superior at smaller scales compared to silicon.
- While excitement is high, transitioning from lab breakthroughs to commercial chips can take many years, which leaves some scepticism about immediate applications.
Why should I read this?
This article presents a fascinating glimpse into the future of transistor technology, showcasing Peking University’s bold move away from silicon. If you’re into tech, innovation, or just curious about how semiconductors are evolving, this is definitely worth a read! It highlights significant advancements that could reshape industries and signal a major shift in global tech competitiveness.